BL12N65 N-Channel Power Mosfet

GME

Description

Production specification N-Channel Enhancement Mode Field Effect Transistor BL12N65 .

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Datasheet Specifications

Part number: BL12N65
Manufacturer: GME
File Size: 202.85 KB
Datasheet: BL12N65-GME.pdf
Description: N-Channel Power Mosfet

Features

* DPAK Worldwide Best RDS(on).
* High dv/dt Capability.
* Excellent Switching Performace. Pb Lead-free
* Easy to Drive.

Applications

* N-channel Enhancement mode Effect Transistor.
* Switching Applications. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 650 V VGS ID IDM PD IAR EAS dv/dt Gate -Source Voltage Maximum Drai

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BL12N65 N-Channel Power Mosfet GME

GME BL12N65-like datasheet