Part number:
BL10N30F
Manufacturer:
GME
File Size:
205.46 KB
Description:
N-channel power mosfet.
BL10N30F Datasheet (205.46 KB)
* High switching speed.
* RDS(ON)=0.65Ω @ VGS=10V.
* 100% avalanche tested.
* Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS
* N-Channel Power MOSFET.
* Switching Applications. ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Paramete
BL10N30F Datasheet (205.46 KB)
BL10N30F
GME
205.46 KB
N-channel power mosfet.
📁 Related Datasheet
BL10N30 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Power MOSFET
BL10N30
FEATURES
High switching speed. RDS(ON)=0.65Ω @ VGS=10V. 100% avalanche tested. Very.
BL10N15A - DARLINGTON COMPLEMENTARY POWER TRANSISTORS
(JILIN SINO)
DARLINGTON COMPLEMENTARY POWER TRANSISTORS
R
BL10N15A BL10P15A
MAIN CHARACTERISTICS
IC VCEO PC (TO-247)
10A 150V 100W
Package
APPLI.
BL10N60F - N-Channel Power MOSFET
(GME)
Silicon N-Channel Power MOSFET
FEATURES
Fast Switching
Pb
ESD Improved Capability
Lead-free
ow Gate Charge (Typical Data:38nC)
Low Reve.
BL10N65 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL10N65
FEATURES
Extremely High dv/dt Capability. 100% AvalancheTtes.
BL10N65A - Power Mosfet
(BELLING)
BL10N65A
Power MOSFET
1．Description
Step-Down Converter
BL10N65A, the silicon N-channel Enhanced
,
MOSFETs, is obtained by advanced MOSFET
techn.
BL10N80 - Power MOSFET
(BELLING)
BL10N80
Power MOSFET
1．Description
Step-Down Converter
BL10N80, the silicon N-channel Enhanced
,
MOSFETs, is obtained by advanced MOSFET
technol.
BL10N80F - N-Channel Power MOSFET
(GME)
10A,800V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.1Ω@ VGS = 10V Ultra Low Gate Charge ( Typical 45 nC )
Pb
Lead-free
Low Reverse Transfer .
BL1002A - Display
(Bolymin)
..
BO LYMIN
BL1002A
Feature
1. COB with metal frame 2. 5x7 dots with cursor 3. Software mand same as KS0066 4. + 5V single powe.
