BL10N65 N-Channel Power Mosfet

GME

Description

Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 .

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Datasheet Specifications

Part number: BL10N65
Manufacturer: GME
File Size: 361.93 KB
Datasheet: BL10N65-GME.pdf
Description: N-Channel Power Mosfet

Features

* Extremely High dv/dt Capability.
* 100% AvalancheTtested.
* Gate Charge Minimized.

Applications

* N-channel Enhancement mode Effect Transistor.
* Switching Applications. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 600 V VGS Gate -Source Voltage ID Maximum Drain Current(continuous)

BL10N65 Distributors

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BL10N65 N-Channel Power Mosfet GME

GME BL10N65-like datasheet