BL6N65D Features
* RDS(ON) =1.7Ω@ VGS = 10V
* Ultra low gate charge ( typical 20 nC ) Pb Lead-free
* Low reverse transfer Capacitance ( CRSS = typical 10 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness Production specification
Datasheet Details
BL6N65D, BL6N65I
GME
251.94 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: BL6N65D, BL6N65I.
Please refer to the document for exact specifications by model.
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