BL6N65I
GME
251.94kb
N-channel power mosfet.
TAGS
📁 Related Datasheet
BL6N65 - N-Channel Power Mosfet
(GME)
6A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.7Ω@ VGS = 10V Ultra low gate charge ( typical 20 nC )
Pb
Lead-free
Low reverse transfer C.
BL6N65D - N-Channel Power Mosfet
(GME)
6A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.7Ω@ VGS = 10V Ultra low gate charge ( typical 20 nC )
Pb
Lead-free
Low reverse transfer C.
BL6N65F - N-Channel Power Mosfet
(GME)
6A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.7Ω@ VGS = 10V Ultra low gate charge ( typical 20 nC )
Pb
Lead-free
Low reverse transfer C.
BL6N60 - N-Channel Power Mosfet
(GME)
Silicon N-Channel Power MOSFET
FEATURES
Fast Switching. Low ON Resistance(Rdson≤1.7Ω).
Pb
Lead-free
LowGateCharge(TypicalData:19nC).
.
BL6N70 - N-Channel Power Mosfet
(GME)
N-Channel Power MOSFET
FEATURES
RDS(ON)=1.6Ω @ VGS=10V, ID=3A Low gate charge (Typically 51nC) Low CRSS (Typically 45pF) High switching speed..
BL6N70F - N-Channel Power Mosfet
(GME)
N-Channel Power MOSFET
FEATURES
RDS(ON)=1.6Ω @ VGS=10V, ID=3A Low gate charge (Typically 51nC) Low CRSS (Typically 45pF) High switching speed..
BL6N80F - N-Channel Power Mosfet
(GME)
6A,800V N-Channel Power Mosfet
FEATURES
6A, 800V, RDS(on) = 2.5Ω @VGS = 10 V Improved dv/dt Capability Fast Switching 100% Avalanche Tested
.
BL600 - smartBASIC Module User Manual
(Laird Technologies)
smart BASIC User Manual
BL600 smartBASIC Module
User Manual
Release 1.1.50.0r3
Americas: +1-800-492-2320 Option 3 Europe: +44-1628-858-940 Hong Kong.
BL602 - Wi-Fi + BLE combo chipset
(Bouffalo Lab)
BL602/604 Datasheet
Version:1.2 Copyright @ 2020 .bouffalolab.
Contents
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
BL604 - Wi-Fi + BLE combo chipset
(Bouffalo Lab)
BL602/604 Datasheet
Version:1.2 Copyright @ 2020 .bouffalolab.
Contents
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..