TIP112 Datasheet, Transistor, GME

TIP112 Features

• Transistor
• Monolithic Construction With Built in Base -Emitter Shunt Resistors.
• Complementary to TIP117. Pb Lead-free
• High DC Current Gain:hFE=1000@VCE=4V,IC=1A.

PDF File Details

Part number:

TIP112

Manufacturer:

GME

File Size:

205.21kb

Download:

📄 Datasheet

Description:

Npn epitaxial silicon darlington transistor.

TAGS

TIP112

GME

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