TIP112 NPN Epitaxial Silicon Darlington Transistor

GME

Description

Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 .

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Datasheet Specifications

Part number: TIP112
Manufacturer: GME
File Size: 205.21 KB
Datasheet: TIP112-GME.pdf
Description: NPN Epitaxial Silicon Darlington Transistor

Features

* Monolithic Construction With Built in Base -Emitter Shunt Resistors.
* Complementary to TIP117. Pb Lead-free
* High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
* Low Collector-Emitter Saturation Voltage.
* Industrial Use. TO-220AB MAXIMUM RATING operating temperature range app

TIP112 Distributors

📁 Related Datasheet

TIP110 TIP110A TIP111 TIP115 TIP116 TIP117

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TIP112 NPN Epitaxial Silicon Darlington Transistor GME

GME TIP112-like datasheet