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TIP112 - NPN Epitaxial Silicon Darlington Transistor

GME

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Datasheet Details

Part number	TIP112
Manufacturer	GME
File Size	205.21 KB
Description	NPN Epitaxial Silicon Darlington Transistor
Datasheet	TIP112-GME.pdf

TIP112 Product details

Features

Monolithic Construction With Built in Base -Emitter Shunt Resistors.
Complementary to TIP117. Pb Lead-free.
High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
Low Collector-Emitter Saturation Voltage.
Industrial Use. TO-220AB.

📁 TIP112 Similar Datasheet

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Other Datasheets by GME

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Published: Apr 10, 2018 |