Part number:
TIP112
Manufacturer:
GME
File Size:
205.21 KB
Description:
Npn epitaxial silicon darlington transistor.
* Monolithic Construction With Built in Base -Emitter Shunt Resistors.
* Complementary to TIP117. Pb Lead-free
* High DC Current Gain:hFE=1000@VCE=4V,IC=1A.
* Low Collector-Emitter Saturation Voltage.
* Industrial Use. TO-220AB MAXIMUM RATING operating temperature range app
TIP112
GME
205.21 KB
Npn epitaxial silicon darlington transistor.
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