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TIP117

PNP Epitaxial Silicon Darlington Transistor

TIP117 Features

* Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free

* Complementary to TIP112.

* High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.

* Low Collector-Emitter Saturation Voltage.

* Industrial Use. TO-220AB MAXIMUM RATING operating temperature range

TIP117 Datasheet (195.69 KB)

Preview of TIP117 PDF

Datasheet Details

Part number:

TIP117

Manufacturer:

GME

File Size:

195.69 KB

Description:

Pnp epitaxial silicon darlington transistor.

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TIP117 PNP Epitaxial Silicon Darlington Transistor GME

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