G09N06, G09N06S2 N-Channel Trench MOSFET

Description

GOFORD N-Channel Trench MOSFET .
The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Datasheet Specifications

Part number: G09N06, G09N06S2
Manufacturer: GOFORD
File Size: 555.03 KB
Datasheet: G09N06S2-GOFORD.pdf
Description: N-Channel Trench MOSFET
Note: This datasheet PDF includes multiple part numbers: G09N06, G09N06S2.
Please refer to the document for exact specifications by model.

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ
* RDS(ON) (at VGS = 4.5V) < 20mΩ
* 100% Avalanche Tested

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