G090VTN02.0 Datasheet (1.08 MB)
G090VTN02.0
AUO
1.08 MB
Lcd.
Product Specification
AU OPTRONICS CORPORATION
( ) Preliminary Specifications ( V ) Final Specifications
Module Model Name
9” Inch Color TFT-LCD G09.
📁 Related Datasheet
G098PU1600M - High Power Fiber Coupled Infrared Laser Diode
(Roithner)
G098PU1600M
TECHNICAL DATA
High Power Fiber Coupled Infrared Laser Diode
Features
• CW Output Power: 600 mW • Typical 980 nm Emission Wavelength • Hi.
G098PU1750M - High Power Fiber Coupled Infrared Laser Diode
(Roithner)
G098PU1750M
TECHNICAL DATA
High Power Fiber Coupled Infrared Laser Diode
Features
• CW Output Power: 750 mW • Typical 980 nm Emission Wavelength • Hi.
G098PU210W - High Power Fiber Coupled Infrared Laser Diode
(Roithner)
G098PU210W
TECHNICAL DATA
High Power Fiber Coupled Infrared Laser Diode
Features
• CW Output Power: 10 W • Typical 808 nm Emission Wavelength • High .
G098PU25W - High Power Fiber Coupled Infrared Laser Diode
(Roithner)
G098PU25W
TECHNICAL DATA
High Power Fiber Coupled Infrared Laser Diode
Features
• CW Output Power: 5 W • Typical 980 nm Emission Wavelength • High Re.
G098PU312W - High Power Fiber Coupled Infrared Laser Diode
(Roithner)
G098PU312W
TECHNICAL DATA
High Power Fiber Coupled Infrared Laser Diode
Features
• CW Output Power: 12 W • Typical 980 nm Emission Wavelength • High .
G098PU322W - High Power Fiber Coupled Infrared Laser Diode
(Roithner)
G098PU322W
TECHNICAL DATA
High Power Fiber Coupled Infrared Laser Diode
Features
• CW Output Power: 22 W • Typical 980 nm Emission Wavelength • High .
G09N06 - N-Channel Trench MOSFET
(GOFORD)
GOFORD
N-Channel Trench MOSFET
Description
The G09N06S2 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. It can be u.
G09N06S2 - N-Channel Trench MOSFET
(GOFORD)
GOFORD
N-Channel Trench MOSFET
Description
The G09N06S2 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. It can be u.
