G09N06S2 N-Channel Trench MOSFET

Description

GOFORD N-Channel Trench MOSFET .
The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Datasheet Specifications

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ
* RDS(ON) (at VGS = 4.5V) < 20mΩ
* 100% Avalanche Tested

G09N06S2 Distributors

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