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G09N06S2 N-Channel Trench MOSFET

G09N06S2 Description

GOFORD N-Channel Trench MOSFET .
The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G09N06S2 Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ
* RDS(ON) (at VGS = 4.5V) < 20mΩ
* 100% Avalanche Tested

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Datasheet Details

Part number
G09N06S2
Manufacturer
GOFORD
File Size
555.03 KB
Datasheet
G09N06S2-GOFORD.pdf
Description
N-Channel Trench MOSFET

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N-Channel Trench MOSFET GOFORD
GOFORD G09N06S2-like datasheet