G3K8N15 Datasheet, Mosfet, GOFORD

✔ G3K8N15 Features

✔ G3K8N15 Application

PDF File Details

Part number:

G3K8N15

Manufacturer:

GOFORD

File Size:

689.80kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ap

Datasheet Preview: G3K8N15 📥 Download PDF (689.80kb)
Page 2 of G3K8N15 Page 3 of G3K8N15

📁 Related Datasheet

G3K8N15KE - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G3K8N15KE N-Channel Enhancement Mode Power MOSFET Description The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate .

G3K - Standard Sinterglass Diode (Vishay)
VISHAY Standard Sinterglass Diode G3A / B / D / G / J / K / M Vishay Semiconductors Features • High temperature metallurgically bonded constructed r.

G30 - Voltage-Controlled Attenuator Module (MACOM)
G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features  FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .

G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04D3 N-Channel Enhancement Mode Power MOSFET Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

Stock and price

Goford Semiconductor
MOSFET N-CH ESD 150V 2A SOT-223
DigiKey
G3K8N15HE
2474 In Stock
Qty : 1000 units
Unit Price : $0.17

TAGS

G3K8N15 N-Channel Enhancement Mode Power MOSFET GOFORD