G3K8N15KE - N-Channel Enhancement Mode Power MOSFET

Datasheet Details

Part number	G3K8N15KE
Manufacturer	GOFORD
File Size	689.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G3K8N15KE-GOFORD.pdf

The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 150V 6A < 370mΩ < 390mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>2.5KV Schematic diagram.

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Published: Nov 14, 2024 |