G3K Datasheet, Diode, Vishay

G3K Features

• Diode
• High temperature metallurgically bonded constructed rectifiers
• Cavity-free glass passivated junction
• Hermetically sealed package
• 3.0 ampere opera

PDF File Details

Part number:

G3K

Manufacturer:

Vishay ↗

File Size:

111.20kb

Download:

📄 Datasheet

Description:

Standard sinterglass diode.

TAGS

G3K

Vishay

📁 Related Datasheet

G30 - Voltage-Controlled Attenuator Module (MACOM)
G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features  FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .

G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04D3 N-Channel Enhancement Mode Power MOSFET Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G3018 - N-CHANNEL MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 Description Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 3.

G3018K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8 640mA Descrip.