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G65P06 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G65P06, a member of the G65P06D5 P-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -65A < 20mΩ Schematic diagram.

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Datasheet preview – G65P06

Datasheet Details

Part number G65P06
Manufacturer GOFORD
File Size 644.92 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G65P06 Datasheet
Additional preview pages of the G65P06 datasheet.

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Full PDF Text Transcription

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G65P06D5 P-Channel Enhancement Mode Power MOSFET Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
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