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GSGTL1R510, GSGTL1R510-GOOD 100V N-Channel MOSFET

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Description

Main Product Characteristics BVDSS 100V D GSGTL1R510 100V N-Channel MOSFET D D RDS(ON) ID 1.5mΩ 300A GSSSSSSS TOLL .
The GSGTL1R510 utilizes the latest techniques to achieve high cell density and low on-resistance.

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This datasheet PDF includes multiple part numbers: GSGTL1R510, GSGTL1R510-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GSGTL1R510, GSGTL1R510-GOOD
Manufacturer
GOOD-ARK
File Size
838.25 KB
Datasheet
GSGTL1R510-GOOD-ARK.pdf
Description
100V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: GSGTL1R510, GSGTL1R510-GOOD.
Please refer to the document for exact specifications by model.

Features

* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge

Applications

* Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Max. Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) 300 ID 192 Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pul

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