Description
Main Product Characteristics BVDSS 100V D GSGTL1R510 100V N-Channel MOSFET D D RDS(ON) ID 1.5mΩ 300A GSSSSSSS TOLL .
The GSGTL1R510 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C)
300
ID 192
Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pul