* ! Low gate-charge ! Low RDSON ! ESD protected, HBM 2KV ! Halogen free by design BENEFITS ! Energy efficient ! Fast switch speed ! Low input and output leakage APPLICATIONS ! DC-DC conversion ! Load switch ! Battery protection SOT-23-6L Package Schematic Diagram Free samples available for immediat
SSF2418E
GOOD-ARK
1.69 MB
Dual n-channel mosfet.
Good-Ark Semiconductor 6A, 20V, Dual N-Channel MOSFET with ESD Protection
In SOT-23-6L Package
Good-Ark Semiconductor introduces SSF2418E, a 6A, 20V, .
📁 Related Datasheet
SSF2418B - 20V Dual N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2418E - MOSFET
(Silikron Semiconductor Co)
Main Product Characteristics:
VDSS
20V
RDS(on) 18mohm(typ.)
ID
6A
Features and Benefits:
SOT23-6
Advanced trench MOSFET process technology .
SSF2429 - Battery protection
(Silikron Semiconductor Co)
SSF2429
..
DESCRIPTION
The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with .
SSF2429 - 20V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
BVDSS
-20V
RDS(ON)
35mΩ
ID
-5A
Features and Benefits
▪ Advanced MOSFET process technology ▪ Ideal for high efficie.
SSF2429UP - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-20V
RDS(on) 29 mΩ(typ.)
ID
-5A
Features and Benefits:
SOT23-6
◼ Advanced trench MOSFET process technology .
SSF2437E - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
ID
-20V 38mΩ (typ.)
-5.5A ①
SOT-23-6
Features and Benefits:
Advanced MOSFET process technology Spec.
SSF2445CU - MOSFET
(Silikron)
Main Product Characteristics
N-ch
P-ch
VDSS RDSon(typ.)
20V 22 mΩ
-20V 62 mΩ
ID
4.9A -2.9A
SSF2445CU
2145C
SOT23-6
Marking and Pin Assignme.
SSF2449 - PWM applications
(Silikron Semiconductor Co)
..
SSF2449
DESCRIPTION
The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
