Description
Main Product Characteristics SSF5508A 55V N-Channel MOSFET VDSS RDS(on) 55V 4.5mohm(Typ) ID 110A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.
Features
* SSF5508A Top View (TO-263)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 175℃ operating temperature
* High Avalanche capability and 100% tested
Applications
* Absolute Max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①
IDM Pulsed Drain Current②
ISM Pulsed Source Current. (Body Diode)
Power Dissipation③ PD @TC = 25°C
Linear derating factor
VDS
Drain-Source Voltage
V