Description
SSF5510G Preliminary .
The SSF5510G is a new generation of middle voltage and high current N.
Channel enhancement mode trench power MOSFET.
Features
* Advanced trench process technology
* Ultra low Rdson, typical 8mohm
* High avalanche energy, 100% test
* Fully characterized avalanche voltage and current
Applications
* Power switching application
SSF5510G Top View
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source voltage
dv/dt
Pe
