SSF5508D
GOOD-ARK
819.93kb
N-channel mosfet. It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetit
📁 Related Datasheet
SSF5508 - MOSFET
(Silikron Semiconductor Co)
SSF5508
Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avala.
SSF5508 - 55V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
55V
RDS(on) 4.5mohm(typ.)
ID 110A
Features and Benefits
TO-220
Advanced trench MOSFET process technology .
SSF5508A - 55V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
SSF5508A
55V N-Channel MOSFET
VDSS RDS(on)
55V 4.5mohm（Typ）
ID 110A
Features and Benefits
SSF5508A Top View (TO-263.
SSF5508A - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
SSF5508A
VDSS RDS(on)
55V 4.5mohm（Typ）
ID 110A
Features and Benefits:
SSF5508A TOP View (TO263)
Advanced trench.
SSF5508U - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
55V
RDS(on) 4.5mohm(typ.) ID 110A
Features and Benefits:
TO220
Advanced t.
SSF5506 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
55V
RDS(on) ID
3.8mΩ(typ.) 140A
Features and Benefits:
TO-220
Advanced M.
SSF5506 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
55V
RDS(on) 3.8mohm(typ.)
ID 140A
TO- 220
Features and Benefits
Advanced trench MOSFET process technology .
SSF5510G - N-Channel MOSFET
(GOOD-ARK)
SSF5510G
Preliminary
FEATURES Advanced trench process technology Ultra low Rdson, typical 8mohm High avalanche energy, 100% test Fully charac.
SSF53A0E - MOSFET
(Silikron)
GENERAL FEATURES
● VDS = 50V,ID = 0.22A
RDS(ON) < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V
ESD Rating：1000V HBM
● High Power and current handing capabil.
SSF5JG - ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER
(Gulf Semiconductor)
SSF5JG THRU SSF5MG
ULTRAFAST EFFICIENT
GLASS PASSIVATED RECTIFIER
VOLTAGE: 600 TO 1000V
CURRENT: 5.0A
FEATURE
Low power loss High surge capabilit.
