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SSF5508D, SSF5508D-GOOD N-Channel MOSFET

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Description

Main Product Characteristics SSF5508D Preliminary VDSS RDS(on) 60V(Typ) 3.8mohm(Typ) ID 110A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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This datasheet PDF includes multiple part numbers: SSF5508D, SSF5508D-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SSF5508D, SSF5508D-GOOD
Manufacturer
GOOD-ARK
File Size
819.93 KB
Datasheet
SSF5508D-GOOD-ARK.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SSF5508D, SSF5508D-GOOD.
Please refer to the document for exact specifications by model.

Features

* SSF5508D Top View (DPAK)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 150℃ operating temperature
* High Avalanche capability and 100% tested

Applications

* Absolute Max Rating Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① ID @ TC = 100°C IDM ISM Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current. (Body Diode) Power Dissipation③ PD @TC = 25°C Linear derating factor

SSF5508D Distributors

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