SSF6N60G
GOOD-ARK
1.22MB
N-channel mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive aval
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SSF6N60G - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
600V 1.32Ω (typ.)
ID 6A
Features and Benefits:
TO-251
Advanced MOSFET process technology Special .
SSF6N40D - 400V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
400V
RDS(on) 0.85Ω (typ.)
ID 5.5A Features and Benefits
TO-252
Advanced MOSFET process technology Special .
SSF6N70A - Advanced Power MOSFET
(Samsung Electronics)
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SSF6N70G - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
700V 1.49Ω (typ.)
ID 6A
Features and Benefits:
TO-251
Advanced MOSFET process technology Special .
SSF6N70GM - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
700V 1.49Ω (typ.)
ID 6A Features and Benefits:
IPAKM-S2 (Details in page6)
Advanced MOSFET process t.
SSF6N80A - Advanced Power MOSFET
(Samsung Electronics)
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SSF6N80A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
SSF6N80A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extend.
SSF6N80A6 - 800V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
800V
RDS(on) 2.2Ω (typ.)
ID 5.5A
TO-262
Features and Benefits
Advanced MOSFET process technology Special .
SSF6N80F - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
800V 2.2Ω (typ.)
ID 5.5A
Features and Benefits:
TO220F
Advanced MOSFET process technology Special.
SSF6N80F - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
800V
RDS(on) 2.2Ω (typ.)
ID 5.5A
Features and Benefits
TO220F
Advanced MOSFET process technology Special .
