SSF6N40D Datasheet, Mosfet, GOOD-ARK

SSF6N40D Features

  • Mosfet TO-252
  • Advanced MOSFET process technology
  • Special designed for PWM, load switching and general purpose applications
  • Ultra low on-resistance with low gate

PDF File Details

Part number:

SSF6N40D

Manufacturer:

GOOD-ARK

File Size:

1.23MB

Download:

📄 Datasheet

Description:

400v n-channel mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive aval

Datasheet Preview: SSF6N40D 📥 Download PDF (1.23MB)
Page 2 of SSF6N40D Page 3 of SSF6N40D

SSF6N40D Application

  • Applications
  • Ultra low on-resistance with low gate charge
  • Fast switching and reverse body recovery
  • 150℃ operating temp

TAGS

SSF6N40D
400V
N-Channel
MOSFET
GOOD-ARK

📁 Related Datasheet

SSF6N60G - N-Channel MOSFET (SILIKRON)
Main Product Characteristics: VDSS RDS(on) 600V 1.32Ω (typ.) ID 6A Features and Benefits: TO-251  Advanced MOSFET process technology  Special .

SSF6N60G - N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 600V RDS(on) 1.32Ω (typ.) ID 6A Features and Benefits TO-251  Advanced MOSFET process technology  Special de.

SSF6N70A - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c .

SSF6N70G - N-Channel MOSFET (SILIKRON)
Main Product Characteristics: VDSS RDS(on) 700V 1.49Ω (typ.) ID 6A Features and Benefits: TO-251  Advanced MOSFET process technology  Special .

SSF6N70GM - N-Channel MOSFET (SILIKRON)
Main Product Characteristics: VDSS RDS(on) 700V 1.49Ω (typ.) ID 6A Features and Benefits: IPAKM-S2 (Details in page6)  Advanced MOSFET process t.

SSF6N80A - Advanced Power MOSFET (Samsung Electronics)
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c .

SSF6N80A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET SSF6N80A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extend.

SSF6N80A6 - 800V N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A TO-262 Features and Benefits  Advanced MOSFET process technology  Special .

SSF6N80F - N-Channel MOSFET (SILIKRON)
Main Product Characteristics: VDSS RDS(on) 800V 2.2Ω (typ.) ID 5.5A Features and Benefits: TO220F  Advanced MOSFET process technology  Special.

SSF6N80F - N-Channel MOSFET (GOOD-ARK)
Main Product Characteristics VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A Features and Benefits TO220F  Advanced MOSFET process technology  Special .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts