Datasheet4U Logo Datasheet4U.com

SSF6N80G - N-Channel MOSFET

SSF6N80G Description

Main Product Characteristics: VDSS RDS(on) 800V 2.35Ω (typ.) ID 5.5A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF6N80G Features

* TO-251 (IPAK)
* Advanced MOSFET process technology

SSF6N80G Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

📥 Download Datasheet

Preview of SSF6N80G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
SSF6N80G
Manufacturer
SILIKRON
File Size
451.31 KB
Datasheet
SSF6N80G-SILIKRON.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • SSF6N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSF6N80A6 - 800V N-Channel MOSFET (GOOD-ARK)
  • SSF6N40D - 400V N-Channel MOSFET (GOOD-ARK)
  • SSF6N70A - Advanced Power MOSFET (Samsung Electronics)
  • SSF6N90A - Advanced Power MOSFET (Samsung Electronics)
  • SSF6NS70D - 700V N-Channel MOSFET (GOOD-ARK)
  • SSF6NS70F - 700V N-Channel MOSFET (GOOD-ARK)
  • SSF6NS70G - 700V N-Channel MOSFET (GOOD-ARK)

📌 All Tags

N-Channel MOSFET SILIKRON
SILIKRON SSF6N80G-like datasheet

SSF6N80G Stock/Price