SSF6N80G N-Channel MOSFET

SILIKRON

Description

Main Product Characteristics: VDSS RDS(on) 800V 2.35Ω (typ.) ID 5.5A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number: SSF6N80G
Manufacturer: SILIKRON
File Size: 451.31 KB
Datasheet: SSF6N80G-SILIKRON.pdf
Description: N-Channel MOSFET

Features

* TO-251 (IPAK)
* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSF6N80G Distributors

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SSF6N80G N-Channel MOSFET SILIKRON

SILIKRON SSF6N80G-like datasheet