Datasheet4U Logo Datasheet4U.com

GS4288C09L - 288Mb CIO Low Latency DRAM

Datasheet Summary

Features

  • Pin- and function-compatible with Micron RLDRAM® II.
  • 533 MHz DDR operation (1.067Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • 8M x 36, 16M x 18, and 32M x 9 organizations available.
  • 8 internal banks for concurrent operation and maximum bandwidth.
  • Reduced cycle time (15 ns at 533 MHz).
  • Address Multiplexing (Nonmultiplexed address option available).
  • SRAM-type interface.
  • Programmable.

📥 Download Datasheet

Datasheet preview – GS4288C09L

Datasheet Details

Part number GS4288C09L
Manufacturer GSI Technology
File Size 2.05 MB
Description 288Mb CIO Low Latency DRAM
Datasheet download datasheet GS4288C09L Datasheet
Additional preview pages of the GS4288C09L datasheet.

📁 Similar Datasheet

  • GS420SD - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
  • GS421SD - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
  • GS400SD - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
  • GS401SD - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
  • GS402SD - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
  • GS41-102M - AXIAL LEADED GLASS TUBE (SunMate)
  • GS41-141N - AXIAL LEADED GLASS TUBE (SunMate)
  • GS41-152M - AXIAL LEADED GLASS TUBE (SunMate)
  • GS41-181N - AXIAL LEADED GLASS TUBE (SunMate)
  • GS41-201M - AXIAL LEADED GLASS TUBE (SunMate)
Other Datasheets by GSI Technology

Full PDF Text Transcription

Click to expand full text
GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.
Published: |