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GS81302T06E, GS81302T06E-500 144Mb SigmaDDR-II+ Burst of 2 SRAM

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Description

GS81302T06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz *350 MHz 1.8 .
Table Symbol Description Type Comments SA Synchronous Address Inputs Input. R/W Synchronous Read/Write Input High: Read Low: Write.

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This datasheet PDF includes multiple part numbers: GS81302T06E, GS81302T06E-500. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GS81302T06E, GS81302T06E-500
Manufacturer
GSI Technology
File Size
216.98 KB
Datasheet
GS81302T06E-500-GSITechnology.pdf
Description
144Mb SigmaDDR-II+ Burst of 2 SRAM
Note
This datasheet PDF includes multiple part numbers: GS81302T06E, GS81302T06E-500.
Please refer to the document for exact specifications by model.

Features

* 2.5 Clock Latency
* Simultaneous Read and Write SigmaDDRTM Interface
* JEDEC-standard pinout and package
* Double Data Rate interface
* Byte Write controls sampled at data-in time
* Burst of 2 Read and Write
* On-Die Termination (ODT) on Data

Applications

* Therefore, the SigmaDDR-II+ SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs are unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed Common I/O SRAM data bandwidth in half. Burst Operations

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