GS8160V18AT 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs

GSI Technology

Description

Preliminary www.DataSheet4U.com GS8160V18/32/36AT-350/333/300/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp .
Applications The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address.

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Datasheet Specifications

Part number: GS8160V18AT
Manufacturer: GSI Technology
File Size: 528.89 KB
Datasheet: GS8160V18AT_GSITechnology.pdf
Description: 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs

Features

* 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 350 MHz
* 150 MHz 1.8 V VDD 1.8 V I/O
* FT pin for user-configurable flow through or pipeline operation
* Single Cycle Deselect (SCD) operation
* 1.8 V +10%/
* 10% core power supply
* 1.8 V I/O supply

Applications

* JEDEC-standard 100-lead TQFP package cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Li

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GS8160V18AT 512K 512K 18Mb Sync Burst SRAMs GSI Technology

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