GS816118DT-xxxV Datasheet - GSI Technology

GS816118DT-xxxV 18Mb Sync Burst SRAMs

Applications The GS8161xxD(GT/D)-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applicati.

GS816118DT-xxxV Features

* IEEE 1149.1 JTAG-compatible Boundary Scan

* 1.8 V or 2.5 V core power supply

* 1.8 V or 2.5 V I/O supply

* LBO pin for Linear or Interleaved Burst mode

* Internal input resistors on mode pins allow floating mode pins

* Byte Write (BW) and/or Global W

GS816118DT-xxxV-GSITechnology.pdf