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GS864218B-xxxV - (GS8642xxB/C-xxxV) 4M x 18 / 2M x 36/ 1M x 72 72Mb S/DCD Sync Burst SRAMs

GSI Technology

The GS864218B-xxxV by GSI Technology is a (GS8642xxB/C-xxxV) 4M x 18 / 2M x 36/ 1M x 72 72Mb S/DCD Sync Burst SRAMs. Below is the official datasheet preview.

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GS864218B-xxxV (GS8642xxB/C-xxxV) 4M x 18 / 2M x 36/ 1M x 72 72Mb S/DCD Sync Burst SRAMs by GSI Technology - Datasheet Preview — Official preview page of the GS864218B-xxxV (GS8642xxB/C-xxxV) 4M x 18 / 2M x 36/ 1M x 72 72Mb S/DCD Sync Burst SRAMs datasheet (GSI Technology).

Datasheet Details

Part number	GS864218B-xxxV
Manufacturer	GSI Technology
File Size	1.15 MB
Description	(GS8642xxB/C-xxxV) 4M x 18 / 2M x 36/ 1M x 72 72Mb S/DCD Sync Burst SRAMs
Datasheet	GS864218B-xxxV_GSITechnology.pdf
Additional preview pages of the GS864218B-xxxV datasheet.

GS864218B-xxxV Product details

Description

Applications The GS864218/36/72(B/C)-xxxV is a 75,497,472-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 250 MHz.
167 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O.
FT pin for user-configurable flow through or pipeline operation.
Single/Dual Cycle Deselect selectable.
IEEE 1149.1 JTAG-compatible Boundary Scan.
ZQ mode pin for user-selectable high/low output drive.
1.8 V or 2.5 V core power supply.
1.8 V or 2.5 V I/O supply.
LBO pin for Linear or Interleaved Burst mode.

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Published: Jan 3, 2008 |