G2305A P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2005/03/21 REVISED DATE : G2305A P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80m -3.2A Desc.
The G2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: G2305A
Manufacturer: GTM
File Size: 381.52 KB
Datasheet: G2305A_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Small Package Outline Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating

G2305A Distributors

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G2305A P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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