* Capable of 2.5V gate drive
* Lower on-resistance
* 2KV ESD Capability Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Total
G2308E
GTM
327.28 KB
N-channel enhancement mode power mosfet.
Pb Free Plating Product
ISSUED DATE :2006/01/16 REVISED DATE :
G2308E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 600m
1.2A
Descr.
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