G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 1.2A Descr.
The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

📥 Download Datasheet

G2308E Datasheet Preview — Preview of G2308E PDF

Datasheet Specifications

Part number: G2308E
Manufacturer: GTM
File Size: 327.28 KB
Datasheet: G2308E_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Capable of 2.5V gate drive
* Lower on-resistance
* 2KV ESD Capability Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Total

G2308E Distributors

📁 Related Datasheet

G2306A G2309 G230HAN01.1 G230P06 G230P06K G2310

📌 All Tags

G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM G2308E-like datasheet