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G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G2308E Description

Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 1.2A Descr.
The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

G2308E Features

* Capable of 2.5V gate drive
* Lower on-resistance
* 2KV ESD Capability Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Total

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Datasheet Details

Part number
G2308E
Manufacturer
GTM
File Size
327.28 KB
Datasheet
G2308E_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM G2308E-like datasheet