G3314 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com CORPORATION G3314 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/03/04 REVISED DATE : BVDSS .
Features. Low On-resistance. Ultrahigh-speed switching. 4V drive Package Dimensions REF.

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Datasheet Specifications

Part number: G3314
Manufacturer: GTM
File Size: 410.99 KB
Datasheet: G3314_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low On-resistance
* Ultrahigh-speed switching
* 4V drive Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Rating

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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