G3407 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

G3407 Datasheet Preview — Preview of G3407 PDF

Datasheet Details

Part number	G3407
Manufacturer	GTM
File Size	329.42 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G3407_GTM.pdf

G3407 Product details

Description

The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. Lower Gate Charge Small Package Outline RoHS Compliant

Features

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=.

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Other Datasheets by GTM

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Published: Sep 19, 2007 |