G3J14
GTM
403.66kb
P-channel enhancement mode power mosfet. The G3J14 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3J14 is unive
TAGS
📁 Related Datasheet
G3J - Standard Sinterglass Diode
(Vishay)
VISHAY
Standard Sinterglass Diode
G3A / B / D / G / J / K / M
Vishay Semiconductors
Features
• High temperature metallurgically bonded constructed r.
G3J-S - Soft-start Function Starts Motors Smoothly and Economically
(OMRON)
Soft-start Solid State Contactors
G3J-S
CSM_G3J-S_DS_E_2_1
Soft-start Function Starts Motors Smoothly and Economically
• The soft-start function all.
G3J-T-C - Solid State Contactor for 3-phase Motors
(Omron)
Solid State Contactor for 3-phase Motors with Built-in Soft Start/Stop and Monitor Output
G3J-T-C
New Models with AC Power Supply Input and Monitor O.
G30 - Voltage-Controlled Attenuator Module
(MACOM)
G30/SMG30
Voltage-Controlled Attenuator Module 100 to 2000 MHz
Rev. V3
Features
FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G3000TF250
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G3000TF450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor Types G3000TF450
Absolute Maximum Ratings
VDRM VRSM VDC-link VRRM.
G300N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300N04D3 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04D3
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04D3 uses advanced trench technology to
provide excellent RDS(ON) , low gate .
G300N04L - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300N04L
N-Channel Enhancement Mode Power MOSFET
Description
The G300N04L uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
G300P06 - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
G300P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G300P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.
Stock and price