GESD1060 NPN EPITAXIAL PLANAR TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 .
Features NPN EPITAXIAL PLANAR T RANSISTOR The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-curre.

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Datasheet Specifications

Part number: GESD1060
Manufacturer: GTM
File Size: 450.01 KB
Datasheet: GESD1060_GTM.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR

Features

* NPN EPITAXIAL PLANAR T RANSISTOR The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max. ) @ IC=3A, IB=0.3A, Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Ma

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GESD1060 NPN EPITAXIAL PLANAR TRANSISTOR GTM

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