Part number:
GESD880
Manufacturer:
GTM
File Size:
175.22 KB
Description:
Npn epitaxial planar transistor.
* NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max.
GESD880
GTM
175.22 KB
Npn epitaxial planar transistor.
📁 Related Datasheet
GESD1060 NPN EPITAXIAL PLANAR TRANSISTOR (GTM)
GESD5B5CU Diode (msksemi)
GESD5V0B5 Transient Voltage Suppressor (GME)
GESD5V0D1 Single Line TVS Diode (GME)
GESD5V0D1 Single Line TVS Diode (LGE)
GESD5V0D5 Plastic-Encapsulate Diodes (GME)
GESDBK5V0Y1 TVS Diode (Leiditech)
GES060 NPN POWER TRANSISTOR (GE)
GES061 NPN POWER TRANSISTOR (GE)
GES062 NPN POWER TRANSISTOR (GE)