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GESD880 Datasheet - GTM

NPN EPITAXIAL PLANAR TRANSISTOR

GESD880 Features

* NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max.

GESD880 Datasheet (175.22 KB)

Preview of GESD880 PDF

Datasheet Details

Part number:

GESD880

Manufacturer:

GTM

File Size:

175.22 KB

Description:

Npn epitaxial planar transistor.

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GESD880 NPN EPITAXIAL PLANAR TRANSISTOR GTM

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