GI1182 - PNP SILICON EPITAXIAL PLANAR TRANSISTOR
GI1182 Features
* The GI1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.
