Datasheet4U Logo Datasheet4U.com

GI1386

PNP EPITAXIAL SILICON TRANSISTOR

GI1386 Features

* PNP EPITAXIAL SILICON TRANSISTOR The GI1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60

GI1386 Datasheet (223.39 KB)

Preview of GI1386 PDF

Datasheet Details

Part number:

GI1386

Manufacturer:

GTM

File Size:

223.39 KB

Description:

Pnp epitaxial silicon transistor.

📁 Related Datasheet

GI1001 Ultra Fast Sinterglass Diode (Vishay)

GI1002 Ultra Fast Sinterglass Diode (Vishay)

GI1003 Ultra Fast Sinterglass Diode (Vishay)

GI1004 Ultra Fast Sinterglass Diode (Vishay)

GI1060 NPN EPITAXIAL PLANAR TRANSISTOR (GTM)

GI1101 Ultrafast Sinterglass Rectifier (Vishay)

GI1102 Ultrafast Sinterglass Rectifier (Vishay)

GI1103 Ultrafast Sinterglass Rectifier (Vishay)

GI1104 Ultrafast Sinterglass Rectifier (Vishay)

GI1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR (GTM)

TAGS

GI1386 PNP EPITAXIAL SILICON TRANSISTOR GTM

Image Gallery

GI1386 Datasheet Preview Page 2

GI1386 Distributor