GI80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GI80LS02 .
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low.

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Datasheet Specifications

Part number: GI80LS02
Manufacturer: GTM
File Size: 271.53 KB
Datasheet: GI80LS02_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low On-resistance
* Simple Drive Requirement
* Fast Switching Speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.4

GI80LS02 Distributors

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GI80LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GI80LS02-like datasheet