GI80LS02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

GI80LS02 Datasheet Preview — Preview of GI80LS02 PDF

Datasheet Details

Part number	GI80LS02
Manufacturer	GTM
File Size	271.53 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI80LS02_GTM.pdf

GI80LS02 Product details

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.

Features

Low On-resistance.
Simple Drive Requirement.
Fast Switching Speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25.

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Published: Sep 4, 2007 |