GI80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GI80N03 .
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8m 80A The GI80N03 provide the designer with the best combination of fast switching,.

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Datasheet Specifications

Part number: GI80N03
Manufacturer: GTM
File Size: 272.47 KB
Datasheet: GI80N03_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low On-resistance
* Simple Drive Requirement
* Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90

GI80N03 Distributors

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GI80N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GI80N03-like datasheet