GJ127 NPN EPITAXIAL PLANAR TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GJ127 PNP EPITAXIAL PLANAR TRANSISTOR .
The GJ127 is designed for use in general purposes and low speed switching applications. High DC current gain. Built-in a damper di.

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Datasheet Specifications

Part number: GJ127
Manufacturer: GTM
File Size: 194.45 KB
Datasheet: GJ127_GTM.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR

Features

* High DC current gain
* Built-in a damper diode at E-C Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage BVCBO Collector to Emitter Voltage BVCEO Emitter to Base Voltage BVEB

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GJ127 NPN EPITAXIAL PLANAR TRANSISTOR GTM

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