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GJ127 NPN EPITAXIAL PLANAR TRANSISTOR

GJ127 Description

www.DataSheet4U.com ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GJ127 PNP EPITAXIAL PLANAR TRANSISTOR .
The GJ127 is designed for use in general purposes and low speed switching applications. High DC current gain. Built-in a damper di.

GJ127 Features

* High DC current gain
* Built-in a damper diode at E-C Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25ะบ Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage BVCBO Collector to Emitter Voltage BVCEO Emitter to Base Voltage BVEB

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Datasheet Details

Part number
GJ127
Manufacturer
GTM
File Size
194.45 KB
Datasheet
GJ127_GTM.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR

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