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GM2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GM2310 Description

Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A Descript.
The GM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

GM2310 Features

* Simple Drive Requirement
* Small Package Outline Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41

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Datasheet Details

Part number
GM2310
Manufacturer
GTM
File Size
210.62 KB
Datasheet
GM2310_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM GM2310-like datasheet