GP4435 Datasheet - GTM

GP4435, P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE : GP4435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 20m -9A The GP.
Features Package Dimensions D GAUGE PLANE E REF.

GP4435_GTM.pdf

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Datasheet Details

Part number:

GP4435

Manufacturer:

GTM

File Size:

317.40 KB

Description:

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATI

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GP4435 Distributors

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GP4435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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