GS3018 - N-CHANNEL MOSFET

GTM

GS3018 Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C GS3018 .
Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance.

GS3018 Features

* N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. Package Dimensions REF. A A1 A2 D E HE Millimeter

GS3018 Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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Datasheet Details

Part number: GS3018
Manufacturer: GTM
File Size: 350.32 KB
Datasheet: GS3018_GTM.pdf
Description: N-CHANNEL MOSFET

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N-CHANNEL MOSFET GTM

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