GSB772SS Datasheet, Transistor, GTM

GSB772SS Features

• Transistor High current output up to -3A Low saturation voltage Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J

PDF File Details

Part number:

GSB772SS

Manufacturer:

GTM

File Size:

301.79kb

Download:

📄 Datasheet

Description:

Pnp epitaxial planar transistor. P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSB772SS is a medium power low voltage transistor, designed for audio po

GSB772SS Application

• Applications or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistanc

TAGS

GSB772SS

GTM

📁 Related Datasheet

GSB772S - PNP EPITAXIAL PLANAR TRANSISTOR (GTM)
.. CORPORATION GSB772S Description Package Dimensions D E S1 ISSUED DATE :2004/09/13 REVISED DATE :2004/11/29B P N P E P I TA X I .

GSB0520SD - Schottky Diode (GOOD-ARK)
Features ■ Low forward voltage drop ■ High conductance ■ Guard ring construction for transient protection GSB0520SD Schottky Diode Package: SOD-523 .

GSB1132 - PNP EPITAXIAL PLANAR TRANSISTOR (GTM)
.. G S B 11 3 2 The GSB1132 is a epitaxial 1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R Description planar type PNP silico.

GSB1386 - PNP EPITAXIAL SILICON TRANSISTOR (GTM)
1/3 GSB1386 PNP EPITAXIAL SILICON TRANSISTOR Description The GSB1386 is a epitaxial planar type PNP silicon transistor . Features *Low VCE(sat). VCE(s.

GSB1694 - PNP EPITAXIAL TRANSISTOR (GTM)
.. ISSUED DATE :2006/01/18 REVISED DATE : GSB1694 Description Package Dimensions PNP EPITAXIAL T RANSISTOR The GSB1694 is designed.

GSB649A - PNP EPITAXIAL PLANAR TRANSISTOR (GTM)
.. ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B GSB649A Description Features Package Dimensions D P N P E P I TA X I A L P L A.

GSBAS16 - SWITCHING DIODE (GTM)
.. CORPORATION G SB AS16 Description V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2006/12/12 REVISED DATE : S U R F A .

GSBAS40 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
.. CORPORATION G SB AS40 t h ru G SB AS40- 06 V O LT A G E 4 0 V, C U R R E N T 0 . 2 A ISSUED DATE :2005/12/20 REVISED DATE : S U.

GSBAS40-04 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
.. CORPORATION G SB AS40 t h ru G SB AS40- 06 V O LT A G E 4 0 V, C U R R E N T 0 . 2 A ISSUED DATE :2005/12/20 REVISED DATE : S U.

GSBAS40-05 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (GTM)
.. CORPORATION G SB AS40 t h ru G SB AS40- 06 V O LT A G E 4 0 V, C U R R E N T 0 . 2 A ISSUED DATE :2005/12/20 REVISED DATE : S U.