GSB1132 Datasheet, Transistor, GTM

GSB1132 Features

• Transistor Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Millimete

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GSB1132

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GTM

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📄 Datasheet

Description:

Pnp epitaxial planar transistor. planar type PNP silicon transistor . (IC/IB = -500mA / -50 mA) Features Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions R

GSB1132 Application

• Applications or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistanc

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GSB1132

GTM

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