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GSB1386 - PNP EPITAXIAL SILICON TRANSISTOR

GTM

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Datasheet Details

Part number: GSB1386
Manufacturer: GTM
File Size: 268.89 KB
Datasheet: GSB1386-GTM.pdf
Description: PNP EPITAXIAL SILICON TRANSISTOR

GSB1386 Product details

Description

The GSB1386 is a epitaxial planar type PNP silicon transistor .

Features

Low VCE(sat). VCE(sat) = -0.35V(Typ. ) (IC/IB = -4A / -0.1A).
Excellent DC current gain characteristics.
Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L M 5q TYP. 0.70 REF. Absolute Maximum Ratings (Ta = 25к,unless otherwise specified) Parameter Symbol Ratings Unit Junc.

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PNP EPITAXIAL SILICON TRANSISTOR GTM

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