GSB1386 - PNP EPITAXIAL SILICON TRANSISTOR
GSB1386 Features
* Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A).
* Excellent DC current gain characteristics.
* Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I
