GSB1386 PNP EPITAXIAL SILICON TRANSISTOR

GTM

Description

1/3 GSB1386 PNP EPITAXIAL SILICON TRANSISTOR .
The GSB1386 is a epitaxial planar type PNP silicon transistor . Low VCE(sat). Excell.

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Datasheet Specifications

Part number: GSB1386
Manufacturer: GTM
File Size: 268.89 KB
Datasheet: GSB1386-GTM.pdf
Description: PNP EPITAXIAL SILICON TRANSISTOR

Features

* Low VCE(sat). VCE(sat) = -0.35V(Typ. ) (IC/IB = -4A / -0.1A).
* Excellent DC current gain characteristics.
* Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GSB1386 Distributors

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GSB1386 PNP EPITAXIAL SILICON TRANSISTOR GTM

GTM GSB1386-like datasheet