GSB1386 Datasheet, Transistor, GTM

GSB1386 Features

• Transistor
• Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A).
• Excellent DC current gain characteristics.
• Complements the GSD2098/GSD2118/GSD2097. Package Dimen

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GSB1386

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GTM

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📄 Datasheet

Description:

Pnp epitaxial silicon transistor. The GSB1386 is a epitaxial planar type PNP silicon transistor . Features

Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A

GSB1386 Application

• Applications or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistanc

TAGS

GSB1386

GTM

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