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GSB1386 Datasheet - GTM

GSB1386 - PNP EPITAXIAL SILICON TRANSISTOR

GSB1386 Features

* Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A).

* Excellent DC current gain characteristics.

* Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I

GSB1386-GTM.pdf

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Datasheet Details

Part number:

GSB1386

Manufacturer:

GTM

File Size:

268.89 KB

Description:

Pnp epitaxial silicon transistor.

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