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GSC1473A - NPN SILICON TRANSISTOR

Datasheet Summary

Description

The GSC1473A is designed for general amplification.

Features

  • High Collector to Emitter Voltage VCEO.
  • High Transition Frequency fT Package Dimensions D TO-92 E S1 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Peak Collector Current ICP Collector Current (continuous) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45.

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Datasheet Details

Part number GSC1473A
Manufacturer GTM
File Size 163.58 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet GSC1473A Datasheet
Additional preview pages of the GSC1473A datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com ISSUED DATE :2005/04/15 REVISED DATE :2006/03/21B GSC1473A NPN SILICON TRANSISTOR Description The GSC1473A is designed for general amplification. Features ԦHigh Collector to Emitter Voltage VCEO ԦHigh Transition Frequency fT Package Dimensions D TO-92 E S1 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Peak Collector Current ICP Collector Current (continuous) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 - 1.
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