GSC4N01 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/19 REVISED DATE : GSC4N01 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.
The GSC4N01 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: GSC4N01
Manufacturer: GTM
File Size: 413.02 KB
Datasheet: GSC4N01_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0

GSC4N01 Distributors

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GSC4N01 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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