GT2530 Datasheet (GTM) - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GT2530, N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial

GT2530 Features

* Low Gate Change

* Low On-resistance

* RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ra