GTC217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B GTC217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
Features Package Dimensions REF.

📥 Download Datasheet

GTC217E Datasheet Preview — Preview of GTC217E PDF

Datasheet Specifications

Part number: GTC217E
Manufacturer: GTM
File Size: 305.06 KB
Datasheet: GTC217E_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continu

Applications

* Lower Gate Charge
* Small Package Outline

GTC217E Distributors

📁 Related Datasheet

GTC-16022 GTC-1602F GTCX25-141M-R02 GTCX25-151M-R02 GTCX25-201M-R02 GTCX25-231M-R02

📌 All Tags

GTC217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GTC217E-like datasheet