* Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continu
GTC217E
GTM
305.06 KB
N-channel enhancement mode power mosfet.
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Pb Free Plating Product
ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B
GTC217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS.
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