* Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@4.5V Drain Cu
GTC9926
GTM
350.97 KB
N-channel enhancement mode power mosfet.
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Pb Free Plating Product
ISSUED DATE :2004/10/18 REVISED DATE :2006/07/27B
GTC9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS.
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